Comprehensive mobility study of silicon nanowire transistors using multi-subband models

Multimode Silicon Nanowire Transistors

The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A het...

Study the Effect of Silicon Nanowire Length on Characteristics of Silicon Nanowire Based Solar Cells by Using Impedance Spectroscopy

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

study the effect of silicon nanowire length on characteristics of silicon nanowire based solar cells by using impedance spectroscopy

silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors

Laser direct synthesis of silicon nanowire field effect transistors.

We demonstrate a single-step, laser-based technique to fabricate silicon nanowire field effect transistors. Boron-doped silicon nanowires are synthesized using a laser-direct-write chemical vapor deposition process, which can produce nanowires as small as 60 nm, far below the diffraction limit of the laser wavelength of 395 nm. In addition, the method has the advantages of in situ doping, catal...